| 发明名称 |
Semiconductor device and method for manufacturing same |
| 摘要 |
In a semiconductor device that uses a low-resistance ohmic contact and which is suitable for high-speed operation, the ohmic contacts are formed by a single-crystal CoSi2 film that is formed on the (100) surface of a silicon substrate.
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| 申请公布号 |
US2002098692(A1) |
申请公布日期 |
2002.07.25 |
| 申请号 |
US20020090554 |
申请日期 |
2002.03.04 |
| 申请人 |
MIURA YOSHINAO |
发明人 |
MIURA YOSHINAO |
| 分类号 |
H01L21/28;H01L21/285;H01L21/336;H01L29/45;H01L29/78;(IPC1-7):H01L21/44;H01L29/76;H01L23/48 |
主分类号 |
H01L21/28 |
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| 主权项 |
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