发明名称 |
Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage |
摘要 |
A semiconductor light-emitting device has a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate and a layer grown on the upper clad layer of the light-emitting section. When growing the current diffusion layer from a crystal interface on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor DELTAa/a is not lower than 0.25% with respect to the upper clad layer at a crystal interface where the crystal composition changes on the upper clad layer of the light-emitting section, the growth rate at least at the start time of growth is made to be 1.0 mum/h or less.
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申请公布号 |
US2002098606(A1) |
申请公布日期 |
2002.07.25 |
申请号 |
US20000490534 |
申请日期 |
2000.01.25 |
申请人 |
NAKAMURA JUNICHI;NAKATSU HIROSHI;SASAKI KAZUAKI |
发明人 |
NAKAMURA JUNICHI;NAKATSU HIROSHI;SASAKI KAZUAKI |
分类号 |
H01L21/205;H01L33/14;H01L33/30;H01L33/36;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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