发明名称 METHOD FOR FABRICATING GRID OF APPARATUS FOR RECOGNIZING FINGERPRINT
摘要 PURPOSE: A method for fabricating a grid of an apparatus for recognizing a fingerprint is provided to reduce a leakage current at a corner of a trench and to decrease stress between a passivation layer and a metal, by preventing a lower corner of the trench formed in the passivation layer from being over-etched by a loading effect. CONSTITUTION: The first interlayer dielectric(11) is formed on a substrate having predetermined devices. The last interconnection is formed on the first interlayer dielectric. The passivation layer(14) is formed to cover the last interconnection. A predetermined portion of the passivation layer is removed to form the trench. The first insulation layer(150) having a good gap-filling characteristic and the second insulation layer(160) having good adhesion with a metal are sequentially formed on the passivation layer including the inner surface of the trench. A barrier metal layer(170) is formed on the second insulation layer. A conductive layer having a sufficient thickness to fill the trench is formed on the barrier metal layer. A planarization process is performed regarding the conductive layer, the barrier metal layer, the second insulation layer and the first insulation layer to expose the upper surface of the passivation layer so that the conductive layer, the barrier metal layer, the second insulation layer and the first insulation layer are left only in the trench.
申请公布号 KR20020061944(A) 申请公布日期 2002.07.25
申请号 KR20010003068 申请日期 2001.01.19
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, JONG HYEOP
分类号 H01L21/34;(IPC1-7):H01L21/34 主分类号 H01L21/34
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