发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 In a semiconductor device inclusive of a chip size package, a plurality of slits 6A are formed in a wiring layer 6. The slits 6A each having a rectangular shape are arranged so that their longer sides are extended along the direction of extending the wiring layer 6. In this configuration, the stress to be exerted on the wiring layer can be relaxed, thereby preventing the characteristic of the underlying transistor from being deteriorated.
申请公布号 US2002096757(A1) 申请公布日期 2002.07.25
申请号 US19990457184 申请日期 1999.12.08
申请人 TAKAO YUKIHIRO;SHINOGI HIROYUKI 发明人 TAKAO YUKIHIRO;SHINOGI HIROYUKI
分类号 H01L21/3205;H01L21/60;H01L23/12;H01L23/31;H01L23/485;H01L23/52;H01L23/528;(IPC1-7):H01L23/48 主分类号 H01L21/3205
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