发明名称 SILICON-BASED MEMS AND TREATMENT OF SILICON-BASED SURFACES TO REDUCE SURFACE CHARGING
摘要 <p>A method of treating silicon-based surfaces for reducing charge migration is disclosed. In accordance with the method, a silicon-based surface is treated with Nitrogenrich pacifying gas environment, after the surface is actuated. The surface is actuated in a drying step, wherein residual water or moisture is removed from the surfaces at an elevated temperature and a reduced pressure. The method of the instant invention is particularly useful for the treatment of ribbon surfaces in grating light valve device, wherein after the ribbon surfaces are treated according to the current invention, surface charging remains low for several days, even in open conditions.</p>
申请公布号 WO2002058111(A2) 申请公布日期 2002.07.25
申请号 US2002001543 申请日期 2002.01.16
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