| 发明名称 |
NAND type flash memory device having dummy region |
| 摘要 |
A NAND type flash memory device has a dummy region forming a dummy pattern. In the flash memory device, a common source line is formed to cross only with an isolation layer adjacent an active region of a normal pattern forming memory cells.
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| 申请公布号 |
US2002096705(A1) |
申请公布日期 |
2002.07.25 |
| 申请号 |
US20010995501 |
申请日期 |
2001.11.26 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI EUN-YOUNG;CHOI JUNG-DAL;LEE JAE-DUK;KIM HONG-SOO |
| 分类号 |
H01L27/115;(IPC1-7):H01L29/788 |
主分类号 |
H01L27/115 |
| 代理机构 |
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