发明名称 |
Modified source/drain re-oxidation method and system |
摘要 |
Methods and devices are disclosed utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the performance characteristics of semiconductor devices such as flash memory. For flash memory, greater control is gained over programming rates, erase rates, data retention and self-aligned source resistance.
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申请公布号 |
US2002096706(A1) |
申请公布日期 |
2002.07.25 |
申请号 |
US20020072015 |
申请日期 |
2002.02.07 |
申请人 |
RUDECK PAUL J.;BENISTANT FRANCIS;HURLEY KELLY |
发明人 |
RUDECK PAUL J.;BENISTANT FRANCIS;HURLEY KELLY |
分类号 |
H01L21/316;H01L21/336;H01L21/8242;H01L21/8247;H01L27/115;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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