METHOD OF MANUFACTURING GROUP III-V COMPOUND SEMICONDUCTOR

摘要

PURPOSE: To provide a method of manufacturing a group a III-V compound semiconductor, in which occurrence of a surface defect due to abnormal growth can be restricted. CONSTITUTION: In the case of manufacturing a thin film crystal wafer 1 by sequentially laminating a small buffer layer 3 having Al composition and large laminated film layers 4 having Al composition with an epitaxial crystal growth on a GaAs substrate 2, a first layer of the laminated film layers 4, that is, an Al0.4Ga0.6As layer 41 is formed by the epitaxial crystal growth on the buffer layer 3 with a growth rate smaller than the epitaxial growth rate of the buffer layer 3 after the buffer layer 3 has been formed by the epitaxial crystal growth, and thus occurrence of a starting point of the abnormal growth on an interface between the buffer layer 3 and the laminated film layers 4 is effectively restricted.