发明名称 ETHER COMPOUND, POLYMER COMPOUND, RESIST MATERIAL AND PATTERN FORMATION METHOD
摘要 PURPOSE: An ether compound, a polymer compound, a resist material containing the polymer compound and a method for forming pattern using the resist material are provided, to improve sensitivity, resolution and etching resistance of the resist material. CONSTITUTION: The ether compound is represented by the formula 1. The polymer compound contains the repeating unit represented by the formula 1-1 or 1-2, and has a mass average molecular weight of 1,000-500,000. In the formulas 1, 1-1 and 1-2, R1 is H or a straight, branched or cyclic alkyl group of C1-C6; R2 is a straight, branched or cyclic alkyl group of C1-C6; R3 is H, an acyl group of C1-C15 or an alkoxycarbonyl group, wherein some or all hydrogens of the groups can be substituted with halogens; k is 0 or 1; m is an integer of 0-3; and n is an integer of 3-6.
申请公布号 KR20020062164(A) 申请公布日期 2002.07.25
申请号 KR20020002451 申请日期 2002.01.16
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 NAKASHIMA MUTSUO;NISHI TSUNEHIRO;TACHIBANA SEIICHIRO
分类号 G03F7/027;C07C43/178;C07C69/00;C07C69/007;C08F232/08;G03F7/004;(IPC1-7):G03F7/027 主分类号 G03F7/027
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