| 摘要 |
A magnetic tunnel junction device and method for making same is provided. A first ferromagnetic portion is provided. A barrier is provided on the first ferromagnetic portion. The barrier includes a first barrier portion on the first ferromagnetic portion. The first barrier portion is oxidized. After oxidizing, a second barrier portion is provided on the first barrier portion. The second barrier may be oxidized or annealed. A second ferromagnetic portion is provided on the barrier. The barrier of the resultant device has a reduced number of pinholes, minimizing the amount of the non-tunnel current, and an improved symmetry of electrical properties. This leads to advantages in performance characteristics and mass-production of the device.
|
