发明名称 CMOS-COMPATIBLE THREE-DIMENSIONAL IMAGE SENSOR IC
摘要 <p>A three-dimensional imaging system is fabricated on a single IC (210). The system includes a two-dimensional array (230) of pixel light sensing detectors (240) and dedicated electronics (250) and associated processing circuitry (260, 270, 280, 285), all preferably fabricated on a single IC using CMOS fabrication techniques. The system includes a detector array comprising a plurality of pixel photodiodes and photodiode circuits, wherein each pixel photodiode acquires delay time data and pulse brightness data simultaneously. The system emits an energy pulse (P) at time t0 and a fraction of the energy is returned to the array by a target object (20). Photodiodes in the array output a brightness signal B(t) that is integrated (600). An elapsed time ET from t0 to when B(t) attains a predetermined threshold value is determined, where the slope of B(t) is B/PW, where B is B(t) after integrating over a time equal to the emitted pulse width PW. Time-of-flight TOF representing time from t0 to when a photodiode begins to detect energy is determined, where TOF = ET - IT, where IT is proportional to PW/B. A system processor determines distance from the system to the target object, from TOF and the velocity of light, and can translate TOF into commands to control electronic devices.</p>
申请公布号 WO2002057714(A1) 申请公布日期 2002.07.25
申请号 US2001045070 申请日期 2001.11.28
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