Manufacturing method of a semiconductor device

摘要

In the formation of a P-type rediffusion region adjacent to a source drain region in an N well, boron fluoride is implanted without a P well covered with a mask. And in the formation of an N-type rediffusion region adjacent to a source drain region in a P well, phosphorus is implanted with an N well covered with a mask. The dose of boron fluoride implanted without a mask is smaller than the dose of phosphorus.