发明名称 |
Method for polishing semiconductor device |
摘要 |
To provide a method having stable high polishing efficiency in the CMP of an LSI wafer and means for reducing the amount of use of consumable items such as a polishing liquid and a pad, an electric field is applied to the abrasive grains on a pad to attract the abrasive grains into a diffusion layer in the polishing liquid solvent near the surface of the pad, thereby holding the abrasive grains in the diffusion layer.
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申请公布号 |
US2002098698(A1) |
申请公布日期 |
2002.07.25 |
申请号 |
US20020103689 |
申请日期 |
2002.03.25 |
申请人 |
KOJIMA HIROYUKI;SATO HIDEMI;OOKAWA TETSUO;URUSHIBARA MARIKO |
发明人 |
KOJIMA HIROYUKI;SATO HIDEMI;OOKAWA TETSUO;URUSHIBARA MARIKO |
分类号 |
B24B1/00;B23H5/00;B24B37/04;H01L21/304;H01L21/306;H01L21/3105;(IPC1-7):H01L21/461 |
主分类号 |
B24B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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