发明名称 Method for polishing semiconductor device
摘要 To provide a method having stable high polishing efficiency in the CMP of an LSI wafer and means for reducing the amount of use of consumable items such as a polishing liquid and a pad, an electric field is applied to the abrasive grains on a pad to attract the abrasive grains into a diffusion layer in the polishing liquid solvent near the surface of the pad, thereby holding the abrasive grains in the diffusion layer.
申请公布号 US2002098698(A1) 申请公布日期 2002.07.25
申请号 US20020103689 申请日期 2002.03.25
申请人 KOJIMA HIROYUKI;SATO HIDEMI;OOKAWA TETSUO;URUSHIBARA MARIKO 发明人 KOJIMA HIROYUKI;SATO HIDEMI;OOKAWA TETSUO;URUSHIBARA MARIKO
分类号 B24B1/00;B23H5/00;B24B37/04;H01L21/304;H01L21/306;H01L21/3105;(IPC1-7):H01L21/461 主分类号 B24B1/00
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