发明名称 |
MULTIVARIATE SEMICONDUCTOR PRESSURE SENSOR WITH PASSAGEWAY |
摘要 |
A multivariate semiconductor pressure sensor includes differential pressure sensing elements formed by a polysilicon membrane (14) spanning a sensor cavity (38) formed in a substrate (12). The sensor cavity (38) is in communication with fluid pressure on the back surface of the substrate (12) by way of a fluid passageway (46) that connects an exterior opening in the back surface of the substrate with an interior opening into either the sensor cavity (38) itself or into a feeder cavity (62) that is in fluid communication with the sensor cavity. Deep Reactive Ion Etching (DRIE) can be used to form the fluid passageway (46).
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申请公布号 |
WO0146665(A9) |
申请公布日期 |
2002.07.25 |
申请号 |
WO2000US34781 |
申请日期 |
2000.12.20 |
申请人 |
THE FOXBORO COMPANY |
发明人 |
FUNG, CLIFFORD, D.;HARRIS, P., ROWE;ZHU, DEGUANG |
分类号 |
G01L9/00;G01L13/02;(IPC1-7):G01L9/00 |
主分类号 |
G01L9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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