| 摘要 |
PURPOSE: A method for fabricating a mask for preventing static electricity is provided to improve a charge distribution gradient, by implanting conductive ions like arsenide ions into a mask substrate. CONSTITUTION: Conductive ions(202) are implanted into a silicon oxide-based substrate(201). A mask layer material and a photoresist layer are sequentially stacked on the substrate. The photoresist layer is selectively patterned. A predetermined portion of the mask layer material is etched to form a mask layer(203a). The mask layer is light-etched by using plasma. An oxide layer is formed on the mask layer. The mask layer material is made of a chrome-based material. A dry etch process is performed to etch the mask layer.
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