MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: To remove an SiO2 layer from the surface of a TiSi2 layer without doing damage to the TiSi2 layer 2. CONSTITUTION: This has a process of removing the SiO2 layer 7 made on a TiSi2 layer 6, using hydrogen fluoride gas, and a process of removing it, heating the TiFx , layer 8 made on the TiSi2 layer 6 made on the TiSi2 layer 6 at the time of removal of the SiO2 layer 7.