发明名称 Phase shift mask blank, phase shift mask, and methods of manufacture
摘要 A phase shift mask blank includes a transparent substrate and a phase shift film thereon. The phase shift film is composed primarily of a metal and silicon, typically molybdenum silicide oxide carbide or molybdenum silicide oxide nitride carbide, and has a film stress no higher than 100 MPa. The low stress makes it possible to maintain a good substrate flatness when the phase shift film is formed during production of the phase shift mask blank, and when the phase shift film is patterned during production of a phase shift mask from the blank.
申请公布号 EP1182504(A3) 申请公布日期 2002.07.24
申请号 EP20010306996 申请日期 2001.08.17
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 INAZUKI, YUKIO;MARUYAMA, TAMOTSU;KANEKO, HIDEO;OKAZAKI, SATOSHI
分类号 C23C14/06;G03F1/32;G03F1/68 主分类号 C23C14/06
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