发明名称 |
Phase shift mask blank, phase shift mask, and methods of manufacture |
摘要 |
A phase shift mask blank includes a transparent substrate and a phase shift film thereon. The phase shift film is composed primarily of a metal and silicon, typically molybdenum silicide oxide carbide or molybdenum silicide oxide nitride carbide, and has a film stress no higher than 100 MPa. The low stress makes it possible to maintain a good substrate flatness when the phase shift film is formed during production of the phase shift mask blank, and when the phase shift film is patterned during production of a phase shift mask from the blank. |
申请公布号 |
EP1182504(A3) |
申请公布日期 |
2002.07.24 |
申请号 |
EP20010306996 |
申请日期 |
2001.08.17 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
INAZUKI, YUKIO;MARUYAMA, TAMOTSU;KANEKO, HIDEO;OKAZAKI, SATOSHI |
分类号 |
C23C14/06;G03F1/32;G03F1/68 |
主分类号 |
C23C14/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|