| 摘要 |
<p>The present invention relates to a semiconductor device (1) with one or more current confinement regions (20,45) and to a method of manufacturing such a device, particularly buried heterostructure light emitting devices such as semiconductor lasers and light emitting diodes. The device (1) comprises an active layer (10), a current conduction region (4), one or more current confinement regions (20,45) adjacent the current conduction region. The current conduction region (4) and current confinement region (20,45) are arranged to channel an applied electric current to the active layer (10). The or each current confinement region includes both a metal-doped current blocking structure (45) and a p-n junction current blocking structure (20). The p-n current blocking structure (20) is between the current conduction region (4) and the metal-doped current blocking structure (45). <IMAGE></p> |
