| 发明名称 |
Soi-type semiconductor device with variable threshold voltages |
| 摘要 |
<p>In an SOI-type semiconductor device, a power supply voltage (VDD) is applied to back gates of P-channel MOS transistors in a standby mode, and a voltage lower than the power supply voltage is applied to the back gates of the P-channel MOS transistors in an active mode. A ground voltage (GND) is applied to back gates of N-channel MOS transistors in the standby mode, and a voltage higher than the ground voltage is applied to the back gates of the N-channel MOS transistors in an active mode. <IMAGE></p> |
| 申请公布号 |
EP1126523(A3) |
申请公布日期 |
2002.07.24 |
| 申请号 |
EP20000127529 |
申请日期 |
1996.01.26 |
| 申请人 |
NEC CORPORATION |
发明人 |
OKUMURA, KOICHIRO;KUROSAWA, SUSUMU |
| 分类号 |
H01L27/04;G05F3/24;H01L21/02;H01L21/336;H01L21/822;H01L21/8238;H01L21/8242;H01L27/02;H01L27/092;H01L27/108;H01L27/12;H01L29/78;H01L29/786;H03K19/00;(IPC1-7):H01L27/02 |
主分类号 |
H01L27/04 |
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