| 摘要 |
PURPOSE: To realize an efficient cleaning of wafer surfaces in a dry ambience in a processes for manufacturing a semiconductor device. CONSTITUTION: This dry cleaning method eliminates contamination on the front surface and the rear surface of a wafer 2 to be treated by utilizing an electrical and chemical reaction of a plasma generated by a plasma generating means 9 in combination with a physical reaction due to a frictional stress of a high speed gas flow formed by structures 4, 5 arranged close to the front surface and the rear surface of the wafer 2 to be treated.
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