BIT-LINE CONTACT AND FORMING METHOD THEREOF

摘要

PURPOSE: A bit-line contact and forming method thereof are provided to vertically twist the bitlines between two bitline levels, not causing a loss in area in the DRAM array. CONSTITUTION: A method of forming bitline contacts: forming gate conductor lines with a capping layer on a substrate(5); depositing an oxide layer over the capping layer; forming a bitline contact line mask over portions of the oxide layer; etching the bitline contact line mask to the capping layer and between the gate conductor lines stopping at the substrate; depositing a silicon layer on the substrate between the conductor lines and non etched portions of the oxide layer; depositing a bitline layer on the silicon layer; masking and etching portions of the bitline layer; and depositing metal over the silicon layer and on sides of non etched portions of the bitline layer to form left and right bitlines.