摘要 |
RF MicroElectroMechanical Systems (MEMS) circuitry (<HIL><PDAT>15</BOLD><PDAT>) on a first high resistivity substrate (<HIL><PDAT>17</BOLD><PDAT>) is combined with circuitry (<HIL><PDAT>11</BOLD><PDAT>) on a second low resistivity substrate (<HIL><PDAT>13</BOLD><PDAT>) by overlapping the first high resistivity substrate (<HIL><PDAT>17</BOLD><PDAT>) and MEMS circuitry (<HIL><PDAT>15</BOLD><PDAT>) with the low resistivity substrate (<HIL><PDAT>13</BOLD><PDAT>) and circuitry (<HIL><PDAT>11</BOLD><PDAT>) with the MEMS circuitry (<HIL><PDAT>15</BOLD><PDAT>) facing the second circuitry (<HIL><PDAT>11</BOLD><PDAT>). A dielectric lid (<HIL><PDAT>19</BOLD><PDAT>) is placed over the MEMS circuitry (<HIL><PDAT>15</BOLD><PDAT>) and between the first substrate (<HIL><PDAT>17</BOLD><PDAT>) and second substrate (<HIL><PDAT>13</BOLD><PDAT>) with an inert gas in a gap (<HIL><PDAT>21</BOLD><PDAT>) over the MEMS circuitry (<HIL><PDAT>15</BOLD><PDAT>). Interconnecting conductors (<HIL><PDAT>25,31,35,37,39,41</BOLD><PDAT>) extend perpendicular and through the high resistivity substrate (<HIL><PDAT>17</BOLD><PDAT>) and through the dielectric lid (<HIL><PDAT>19</BOLD><PDAT>) to make electrical connection with the low resistivity substrate (<HIL><PDAT>13</BOLD><PDAT>).</PTEXT> |