发明名称 Semiconductor light-emitting device
摘要 A semiconductor light-emitting device comprising a substrate having a surface having an off-angle to a crystallographic plane of low-degree surface orientation, the substrate having thereon: compound semiconductor layers including an active layer; a selective growth protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected; and a ridge-shaped compound semiconductor layer fomred to cover the opening. This semiconductor light-emitting device with stable laser property can be manufactured in a simplified way.
申请公布号 EP0945939(A3) 申请公布日期 2002.07.24
申请号 EP19990302327 申请日期 1999.03.25
申请人 MITSUBISHI CHEMICAL CORPORATION 发明人 SHIMOYAMA, KENJI;NAGAO, SATORU;FUJII, KATSUSHI;GOTO, HIDEKI
分类号 H01S5/065;H01S5/223;H01S5/227;H01S5/32;H01S5/343 主分类号 H01S5/065
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