PROCESS FOR FORMING A METALLIC INTERCONNECT STRUCTURE FOR INTEGRATED CIRCUITS

摘要

A multi-level interconnect structure (200) and process of formation, in which a via dielectric (214) is disposed between upper and lower horizontal metallic conductors (217, 211). A vertical metallic conductor (222) is disposed within the via dielectric layer and has end portions contacting the horizontal metallic conductors such that the size of the vertical contact interfaces between the conductors is greater than the horizontal contact interfaces.