| 摘要 |
<p>The object of the present invention is to prevent elements in a triple-well MOS transistor from being destroyed due to an increase in current consumption or a thermal runaway of a parasitic bipolar transistor. <??>In a triple-well NMOS transistor 311 comprising a P well area 22 formed within an N well area 28 and a MOSFET formed in the P well area 22, an impurity-diffused area 29 having a lower impurity concentration than an N<+> drain area 25 is formed close to the N<+> drain area 25, thereby restraining substrate current. The impurity concentration of the P well area 22 is increased to reduce the current gain of a parasitic bipolar transistor. To further reduce the current gain, a punch-through stopper area may be formed. The impurity concentration of the impurity-diffused area 29 is set to equal that of an N- LDD area 31 of a fine CMOS device integrated on the same substrate 1. These areas are formed during a single ion injection step. <IMAGE></p> |
