| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high-frequency bipolar transistor, which is increased in cut-off frequency and improved in high-frequency characteristics. SOLUTION: A high-frequency bipolar transistor is composed of a semiconductor chip 1, a base 3, collector 4, and emitter electrode 2 of the chip 1, bonding wires 6, 7, and 5 which connect the bonding pads to the electrodes 3, 4, and 2, and a sealing resin 8 which seals up these component parts, where the semiconductor chip 1 is arranged on the emitter electrode 2, and the base electrode 3 and the collector electrode 4 are provided sandwiching the emitter electrode 2 between them. |
