SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a reactor for growing a high-quality film in a highly clean reaction atmosphere without being affected by contamination from a throat. CONSTITUTION: A back diffusion preventing body 8 is arranged between a throat flange 7 and a boat setting table 19, and a substrate processing space 20 is isolated from a throat space 21 so that contaminants caused in a throat portion B do not diffuse to the substrate processing space 20. A throat exhaust pipe 15, which forms a throat exhaust system that evacuates the throat space 21 independently of the substrate processing space 20, is mounted on the throat flange 7, a purge gas is supplied to the throat space 21 while the throat space 21 is evacuated so that the contaminants are exhausted from the throat space 21. A gas supply nozzle 4 drawn from the throat flange 7 is extended from the throat space 21 to the substrate processing space 20, and a reaction gas is directly introduced into the substrate processing space 20 so that the contaminant in the throat space 21 is not intruded into the substrate processing space 20.