SEMICONDUCTOR DEVICE MANUFACTURING METHOD CAPABLE OF PREVENTING PARTICLE GENERATION

摘要

PURPOSE: A semiconductor device manufacturing method capable of preventing the particle generation is provided to increase the yield through the prevention of the particle generation of a post-process by minimizing a thickness of the stacked layer residing on a dead angle part of a CMP process on a wafer. CONSTITUTION: A layer(40) of a fixed thickness is stacked on the wafer(10). The accumulated layer is planarized by the CMP process. The photoresist(30) is coated on the wafer. After the CMP process, the remaining stacked layer of the dead angle part on the front edge part is exposed by removing the photoresist coated on the front edge part of the wafer. The exposed stacked layer of the dead angle part is etched and the photoresist remaining on the wafer is removed. The thickness of the photoresist is about 5000-15000 angstroms and the etching of the exposed dead angle part is carried out by the wet-etching.