发明名称 |
MICROWAVE INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To reduce the distance from an electronic device to a microstrip line end and chip size by connecting a field-effect transistor at contact holes of an insulating layer on this transistor to a ground conductor or a signal line. SOLUTION: To connect a microstrip line 15 on a semiconductor substrate 11 to an electronic device of this substrate, an insulator 17 is removed to form contact holes on the electronic device. This avoids deteriorating the high-speed performance of the device. due to the increase of the capacitance with the insulator and reduces the distance between the electronic device and microstrip line end. Contact hole locations are gathered only on the electronic device to allow the contact hole-forming margin to be reduced. Hence this is very advantageous in reduction of the chip size. |
申请公布号 |
JPH1093021(A) |
申请公布日期 |
1998.04.10 |
申请号 |
JP19960246464 |
申请日期 |
1996.09.18 |
申请人 |
TOSHIBA CORP |
发明人 |
SUGIYAMA TORU;MORITSUKA KOHEI |
分类号 |
H01L21/3205;H01L21/768;H01L21/822;H01L23/52;H01L23/66;H01L27/04;H01L27/06;H01L29/417;H01L29/778;(IPC1-7):H01L27/04;H01L21/320 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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