发明名称 MICROWAVE INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To reduce the distance from an electronic device to a microstrip line end and chip size by connecting a field-effect transistor at contact holes of an insulating layer on this transistor to a ground conductor or a signal line. SOLUTION: To connect a microstrip line 15 on a semiconductor substrate 11 to an electronic device of this substrate, an insulator 17 is removed to form contact holes on the electronic device. This avoids deteriorating the high-speed performance of the device. due to the increase of the capacitance with the insulator and reduces the distance between the electronic device and microstrip line end. Contact hole locations are gathered only on the electronic device to allow the contact hole-forming margin to be reduced. Hence this is very advantageous in reduction of the chip size.
申请公布号 JPH1093021(A) 申请公布日期 1998.04.10
申请号 JP19960246464 申请日期 1996.09.18
申请人 TOSHIBA CORP 发明人 SUGIYAMA TORU;MORITSUKA KOHEI
分类号 H01L21/3205;H01L21/768;H01L21/822;H01L23/52;H01L23/66;H01L27/04;H01L27/06;H01L29/417;H01L29/778;(IPC1-7):H01L27/04;H01L21/320 主分类号 H01L21/3205
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