发明名称 |
Process sequence for improved seed layer productivity and achieving 3mm edge exclusion for a copper metallization process on semiconductor wafer |
摘要 |
The present invention generally provides an apparatus and a method for electrochemical deposition of a metal layer on a substrate that achieves high throughput and minimal edge exclusion. The invention provides a method for forming a metal layer on a substrate comprising: depositing a full coverage seed layer over the substrate; electrochemically depositing a metal layer over the seed layer; and removing any exposed seed layer from an annular edge portion of the substrate. The invention also provides an apparatus for forming a metal layer on a substrate comprising: an electrochemical deposition cell having a cathode contact member adapted to contact a peripheral portion of a substrate at less than about 3 mm from an edge of the substrate, a processing cell adapted to remove any exposed seed layer on a peripheral portion of the substrate; and a transfer chamber having a robot adapted to transfer a substrate between the electrochemical deposition cell and the processing cell for removing exposed seed layer.
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申请公布号 |
US6423636(B1) |
申请公布日期 |
2002.07.23 |
申请号 |
US19990443832 |
申请日期 |
1999.11.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
DORDI YEZDI;SUGARMAN MICHAEL |
分类号 |
C23F1/00;C23F1/02;C25D7/12;C25D17/06;C25F3/00;C25F3/14;H01L21/288;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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