发明名称 Semiconductor device having a capacitor and method for the manufacture thereof
摘要 A semiconductor device for use in a memory cell including an active matrix provided with a transistor and a first insulating layer formed around the transistor; a capacitor structure formed on top of the first insulating layer, composed of a bottom electrode, a capacitor thin film placed on top of the bottom electrode and a top electrode formed on top of the capacitor thin film; a second insulating layer formed on top of the transistor and the capacitor structure; a metal interconnection formed on top of the second insulating layer and the active matrix to electrically connect the transistor to the capacitor structure; and a hydrogen barrier layer formed on top of the metal interconnection.
申请公布号 US6423554(B2) 申请公布日期 2002.07.23
申请号 US20000739371 申请日期 2000.12.19
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 YANG BEE-LYONG;LEE SEAUNG-SUK;HONG SUK-KYOUNG;KANG NAM-SOO
分类号 H01L27/105;H01L21/02;H01L21/316;H01L21/8242;H01L21/8246;H01L27/115;(IPC1-7):H01L21/00;H01L21/824;H01L21/20 主分类号 H01L27/105
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