| 摘要 |
A semiconductor memory device (10) having a peripheral ground line (GND) receiving charge when discharging a sub-word line (SWL) is provided. The semiconductor memory device (10) can include a row decoder (XDEC1), RA driver (RAD11), and sub-decoder blocks (SB). Row decoder (XDEC1) may activate a main word line (MWL) based on a received address value. RA driver (RAD11) may activate a sub-decoder block (SB) from a group of sub-decoder blocks coupled to the activated main word line (MWL). RA driver (RAD11) may provide a current path (4) to peripheral ground (GND) when the sub-word line (SWL) transitions from the activated state to the unactivated state. Non-selected sub-word lines may have a current path (1, 2, or 3) to a word line ground (GNDXDEC) for holding the other word lines at a "quiet" ground potential. Noise produced from discharging a sub-word line may not affect non-selected word lines.
|
