| 摘要 |
In a method for cleaning a semiconductor substrate, ozone water is supplied to a cleaning chamber, which contains the substrate, thereby to oxidize the surface thereof, and thus form a thin oxide film on the surface. After a lapse of a predetermined time period, ammonium hydroxide is mixed with the ozone water, thereby generating a cleaning liquid. The cleaning liquid is applied to the surface of the substrate to clean the surface. At this time, the oxide film reduces the etching rate at which the surface of the substrate is etched when it is cleaned.
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