| 摘要 |
A compact SCR structure is provided, having an N-type semiconductor layer, a P-type semiconductor layer in contact with the N-type semiconductor layer, an anode doped region, a cathode doped region, a first contact region and a second contact region. The anode doped region is formed in the N-type semiconductor layer, while the cathode doped region is formed in the P-type semiconductor layer. The first and second contact regions are formed in the N-type semiconductor layer and the P-type semiconductor layer, respectively. According to the present invention, at least one of the anode doped region and the cathode doped region is combined with one of the corresponding first and second contact regions.
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