| 摘要 |
A temperature stable bias circuit for a radio frequency (RF) power amplifier uses current deletion and current supplement techniques to maintain the bias, or reference current of the RF power amplifier at a stable level regardless of the temperature that the power amplifier is operating. When temperature increases, the current deletion circuitry reduces the bias current supplied to the power transistor. When the temperature decreases, the current supplement circuitry increases the bias current supplied to the power transistor. This bias circuitry allows the output of the RF power amplifier to remain constant. The current deletion and current supplement circuitry can be fabricated using the same processing technology as the power amplifier and can be easily integrated into the power amplifier device packaging.
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