发明名称 Semiconductor device
摘要 To improve the moisture resistance of a chip size package, a seal ring 4 is made up of tungsten plugs and metal electrodes 11 and 12. Further, a spacer is formed on both or either of a first flank 13 and a second flank 14. The spacer can be formed on all interlayer insulating films extended to a dicing line part 3, whereby multiple seal rings can be provided.
申请公布号 US6424051(B1) 申请公布日期 2002.07.23
申请号 US20000500271 申请日期 2000.02.08
申请人 SANYO ELECTRIC CO., LTD. 发明人 SHINOGI HIROYUKI;TAKAI NOBUYUKI;TOKUSHIGE RYOJI;KITAGAWA KATSUHIKO
分类号 H01L23/52;H01L21/301;H01L21/3205;H01L23/00;H01L23/31;H01L23/58;(IPC1-7):H01L23/28 主分类号 H01L23/52
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