| 摘要 |
PROBLEM TO BE SOLVED: To provide a pad conditioner for a CMP device which is used for working a semiconductor substrate, capable of attaining high working efficiency without falling a diamond abrasive grain. SOLUTION: In this pad conditioner with the diamond abrasive grain 1 fixed on the surface of a metal base 4 using a plating layer 3, and a resin layer 2 formed on the surface of the plating layer, the thickness of the resin layer 2 is made between 5 μm and 100 μm, and the thickness of the plating layer is made between 50% and 90% of the mean grain size of the diamond abrasive grain. The resin layer 2 is formed in the following way: Processes of applying resin and semi-baking are repeated for layering respective layers from the bottom layer to the layer right down the top layer among multiple layers constituting the resin layer of a layered structure, the resin to the top layer is applied, and then complete baking is performed for the whole layer of the resin forming the resin layer, thereby forming the resin layer covering the surface of the plating layer. |
