| 摘要 |
PROBLEM TO BE SOLVED: To prevent the threshold voltage of an HEMT element that is formed by using a compound semiconductor from becoming uneven. SOLUTION: A buffer layer 2, an electron supply layer 3, an active layer 4 containing a semiconductor impurity that is equal to or less than 1×10<17> atmos cm<-3> and a separation layer 5, and an ohmic contact layer 6 are successively laminated on a semiconductor substrate 1, and a depletion type element with source/drain electrodes 7 and 8 formed on the ohmic contact layer and an enhancement type element with a gate electrode 11 formed on the source/ drain electrodes 7 and 8 and the active layer 4 formed on the ohmic contact layer are provided.
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