Diamond interconnection substrate and a manufacturing method therefor

摘要

An electrical connection board includes a diamond substrate and an implantation metal layer constituted by the presence of metal elements in the diamond substrate. The metal layer has a thickness of at least 10 nm and a concentration of at least 1020 cm-3 in the diamond substrate. The implantation metal layer is formed by ion implanting metal elements with a high energy level of at least 1 MeV and a high dose of at least 1016 cm-2. Thus, a technique is provided by which a multi-layer electrical interconnection is realized in the diamond substrate having the highest thermal conductivity of all known materials.