| 摘要 |
A .beta.-SiC polycrystal plate (2) is laminated onto the surface of an .alph a.- SiC single crystal substrate (1) in an intimately contacted state through a ground surface, or alternatively may be laminated in a layer form by thermal CVD onto the surface of an .alpha.-SiC single crystal substrate (1) to form a composite (M), which is heat-treated in the temperature range of from 1850 t o 2400 ~C to transform the polycrystal of the .beta.-SiC polycrystal plate (2) into a single crystal, permitting a single crystal aligned in the same orientation as the crystal axis of the .alpha.-SiC single crystal substrate (1) to be grown. This process serves to easily and efficiently prepare a lar ge high-quality single crystal of SiC substantially free from a micropipe defec t, a lattice defect, a grain boundary formed by the intrusion of impurities and the like. |
