发明名称 |
Semiconductor device, a method of manufacturing the same, and a semiconductor device protective circuit |
摘要 |
A Schottky diode which provides a structure having no P-N junction while improving voltage resistance against a reverse bias when employed in combination with an insulated gate semiconductor device in particular. In order to attain the aforementioned object, a P-type impurity region having a surface exposed on a surface of an N-type semiconductor substrate functioning as a drain for functioning as a channel region and a gate insulator film covering it are provided. A gate electrode is extended from above the gate insulator film over a first taper of an oxide film. In a Schottky diode rendering the semiconductor substrate a cathode and having a boundary layer as a Schottky region, on the other hand, an anode electrode is extended from above the boundary layer over a second taper of the oxide film existing above an end portion of the boundary layer.
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申请公布号 |
US6423598(B1) |
申请公布日期 |
2002.07.23 |
申请号 |
US20000555522 |
申请日期 |
2000.06.08 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TAKAHASHI HIDEKI;TOMINAGA SHUUICHI |
分类号 |
H01L21/285;H01L21/311;H01L21/329;H01L29/06;H01L29/40;H01L29/739;H01L29/78;H01L29/872;(IPC1-7):H01L21/336;H01L21/822;H01L21/331;H01L29/74;H01L29/47 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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