发明名称 Method removing residual photoresist
摘要 A method for removing residual color photoresist material from a substrate after photoresist development. The method washes the substrate with a high-pressure jet of de-ionized water that contains an activated interface agent. A second method of removing the residual photoresist material bombards the substrate with oxygen plasma for a brief period so that the residual photoresist material is polarized and then rinses the substrate with de-ionized water.
申请公布号 US6422246(B1) 申请公布日期 2002.07.23
申请号 US20000515952 申请日期 2000.02.29
申请人 UNITED MICROELECTRONICS CORP. 发明人 KU CHI-FA;CHOU HSIAO-PANG
分类号 G03F7/30;(IPC1-7):B08B9/00 主分类号 G03F7/30
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