发明名称 |
Method removing residual photoresist |
摘要 |
A method for removing residual color photoresist material from a substrate after photoresist development. The method washes the substrate with a high-pressure jet of de-ionized water that contains an activated interface agent. A second method of removing the residual photoresist material bombards the substrate with oxygen plasma for a brief period so that the residual photoresist material is polarized and then rinses the substrate with de-ionized water.
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申请公布号 |
US6422246(B1) |
申请公布日期 |
2002.07.23 |
申请号 |
US20000515952 |
申请日期 |
2000.02.29 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
KU CHI-FA;CHOU HSIAO-PANG |
分类号 |
G03F7/30;(IPC1-7):B08B9/00 |
主分类号 |
G03F7/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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