发明名称 METHOD FOR FORMING PATTERN
摘要 <p>In a method for effectively making finer space portions in a pattern such as line-and-space pattern, trench pattern or hole pattern by providing on a resist pattern 11 of 2 mu m or more on a substrate 2 a coating layer 3 capable of being cross-linked in the presence of an acid, and then cross-linking the coating layer 3 adjacent to the resist with an acid diffused from the resist pattern to thicken the resist pattern, the deformation of the thickened pattern is prevented by irradiating the resist pattern 11 with visible light or UV rays of 150 to 450 nm in wavelength before and/or after the formation of the coating layer. The thus formed pattern may further be subjected to metal plating to produce, for example, devices such as magnetic heads with high fidelity to the designed pattern.</p>
申请公布号 EP1223470(A1) 申请公布日期 2002.07.17
申请号 EP20000964679 申请日期 2000.10.04
申请人 CLARIANT INTERNATIONAL LTD. 发明人 KANDA, TAKASHI;TANAKA, HATSUYUKI
分类号 G11B5/31;G03F7/00;G03F7/26;G03F7/40;G11B5/127;H01L21/027;(IPC1-7):G03F7/40 主分类号 G11B5/31
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