| 摘要 |
An associative memory is disclosed which includes a memory cell having first and second semiconductor memory devices each having electrically controllable first and second threshold voltage levels and each having an input electrode, an output electrode and a control electrode. The threshold voltage of the semiconductor memory devices are set to complementary ones of the threshold voltage levels indicative of the state of the binary bit to be stored in that particular memory cell. Complementary signals are applied to the input electrodes of the semiconductor memory devices indicative of the state of the applied binary bit to be compared to the bit stored in the memory cell. The output electrodes of the two semiconductor memory devices in the cell are connected to an output node. An interrogation signal is applied to the control electrodes of the semiconductor memory devices, and an output signal is obtained from the output node indicative of the correlation of the stored bit and the applied bit at the time of the application of the interrogation signal.
|
