| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film transistor having improved performance and reliability and good characteristics and a manufacturing method therefor. SOLUTION: A gate-insulating film 13 is formed on a semiconductor layer 12 formed on an insulating substrate 11. The gate-insulating film 13 has a first region 13b abutting on the source region 12b of the semiconductor layer 12 and a first region 13c abutting on the drain region 12c thereof, and a second region 13a between the first regions 13b, 13c, which are thicker than the second region. First electrodes 14b, 14c are formed on the gate insulating film 13b, 13c, and a second electrode is formed on the gate-insulating film 13a and the first electrodes 14b, 14c. The first electrodes and the second electrode form a gate electrode 14.</p> |
