| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the number of column redundant fuse boxes and the area of redundant fuse boxes. SOLUTION: The semiconductor device has a plurality of memory blocks 401 and 403 including normal and redundant memory cells, a plurality of normal column selection line drivers 409 and 411, a plurality of redundant column selection line drivers 405 and 407, and a common column redundant fuse box 413. All of the normal column selection line driver 409 and the redundant column selection line driver 405 include a fuse, and the column redundant fuse box 413 is shared by the redundant column selection line drivers 405 and 407. Also, the redundant fuse box 413 has a repair address judgment part that latches a repair address in advance, compares an input address with the latched repair one, and judges whether the input address is the same as the repair one or not, and a redundant enable signal generation part that responds to the output signal of the repair address judgment part and generates a redundant enable signal.</p> |
