发明名称 |
Transistor having raised source and drain |
摘要 |
The preferred embodiment of the present invention provides a transistor structure and method for fabricating the same that overcomes the disadvantages of the prior art. In particular, the preferred structure and method results in lower leakage and junction capacitance by using raised source and drains which are partially isolated from the substrate by a dielectric layer. The raised source and drains are preferably fabricated from the same material layer used to form the transistor gate. The preferred method for fabricating the transistor uses hybrid resist to accurately pattern the gate material layer into regions for the gate, the source and the drain. The source and drain regions are then connected to the substrate by growing silicon. The preferred method thus results in an improved transistor structure while not requiring excessive fabrication steps.
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申请公布号 |
US6420766(B1) |
申请公布日期 |
2002.07.16 |
申请号 |
US19990368843 |
申请日期 |
1999.08.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BROWN JEFFREY S.;DUNN JAMES S.;HOLMES STEVEN J.;HORAK DAVID V.;LEIDY ROBERT K.;VOLDMAN STEVEN H. |
分类号 |
G03F7/095;G03F7/38;H01L21/027;H01L21/265;H01L21/311;H01L21/336;(IPC1-7):H01L29/76 |
主分类号 |
G03F7/095 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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