| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a single electronic element wherein high temperature operation and miniaturizing are possible. SOLUTION: First, a silicon layer on an insulating substrate is formed into the form in which two fine lines 106 are so connected between a source 103 and a drain 104 that these lines are at right angles to the adjoining fine line. Then, the fine line 106 is made thinner by thermal oxidation, so that, by the stress at thermal oxidation, width and thickness of a fine line non-connection part are made smaller than those of a connection part 107 of the fine lines 106. Continuously, a gate 105 is forced on an oxide film. Since quantum dot structure is formed with the use of the stress at thermal oxidation, the quantum dot structure below lithography limit can be formed, so that a single electronic element wherein high temperature operation and integration are possible is manufactured. |
