Process to produce ultrathin crystalline silicon nitride on Si (111) for advanced gate dielectrics,申请号US09/747966-传众专利搜索

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发明名称	Process to produce ultrathin crystalline silicon nitride on Si (111) for advanced gate dielectrics
摘要
申请公布号	US6420729(B1)	申请公布日期	2002.07.16
申请号	US09/747966	申请日期	2000.12.27
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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