发明名称 Substrate processing method and substrate processing apparatus
摘要 In a hot plate for performing heat processing while an inert gas is supplied, a mounting table is provided with a groove and a lower end portion of a lid body can be inserted into the groove. The lid body is lowered in two steps by a lid body drive apparatus. The lid body forms a processing chamber between the lid body and the mounting table by the lowering of the first step, and the lower end portion of the lid body is inserted into the groove by the lowering of the second step, thereby reducing the processing chamber in capacity. Consequently, in a substrate processing apparatus which requires a supply of gas, it becomes possible to reduce the capacity of the processing chamber and to reduce the required amount of gas.
申请公布号 US6419751(B1) 申请公布日期 2002.07.16
申请号 US20000625305 申请日期 2000.07.25
申请人 TOKYO ELECTRON LIMITED 发明人 NAGASHIMA SHINJI
分类号 H01L21/00;(IPC1-7):C23C16/00 主分类号 H01L21/00
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